specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 5 august 2011 ec1089 ? watt, high linearity ingap hbt amplifier product features ? 10 C 2500 mhz ? +24 dbm p1db ? +41 dbm oip3 ? 15.5 db gain at 900 mhz ? 12.2 db gain at 1900 mhz ? lead-free/green/rohs compliant sot-89 package applications ? mobile infrastructure ? final stage amplifiers for repeaters ? defense / homeland security product description the ec1089 is a high dynamic range driver amplifier in a low-cost surface mount package. the ingap/gaas hbt is able to achieve high performance across a broad ran ge with +41 dbm oip3 and +24 dbm of compressed 1db power. it is housed in an industry standard lead-free/green/r ohs- compliant sot-89 package. all devices are 100% rf and dc tested. the ec1089 is targeted for use as a driver amplifie r in wireless infrastructure where high linearity and me dium power is required. an internal active bias allows the ec1089 to maintain high linearity over temperature and operate directly off a single +5 v supply. this co mbination makes the device an excellent candidate for transce iver line cards in current and next generation multi-carrier 3g base stations. functional diagram rf in gnd rf out gnd 1 2 3 4 function pin no. input 1 output/bias 3 ground 2, 4 specifications (1) parameters units min typ max operational bandwidth mhz 10 2500 test frequency mhz 1900 gain db 10.5 12.2 input return loss db 15 output return loss db 10 output p1db dbm +23.5 output ip3 (2) dbm +40 +41 is-95a channel power @ - 45 dbc acpr dbm +17 noise figure db 5.9 test frequency mhz 2140 gain db 11.5 output p1db dbm +23.5 output ip3 (2) dbm +40 operating current range ma 140 160 175 device voltage v +5 1. test conditions unless otherwise noted: 25 oc, supply voltage = +5 v, 800 mhz in a tuned application circuit. 2. 3oip measured with two tones at an output power of +11 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. absolute maximum rating parameter rating storage temperature -65 to +150 c rf input power (continuous) +18 dbm device voltage +6 v device current 220 ma junction temperature +220 c thermal resistance 149 c / w operation of this device above any of these paramet ers may cause permanent damage. typical performance (3) parameters units typical frequency mhz 900 1900 2140 s21 - gain db 15.5 12.2 11.5 s11 - input r.l. db -14 -15 -15 s22 - output r.l. db -10 -10 -10 output p1db dbm +24 +23.5 +23.5 output ip3 dbm +40 +41 +40 noise figure db 5.1 5.9 5.4 supply bias +5 v @ 160 ma 3. typical parameters reflect performance in a tun ed application circuit: supply voltage = +5 v, i = 160 ma, +25 c ordering information part no. description EC1089B-G ? watt, ingap hbt gain block (lead-free/green/rohs-compliant sot-89 pkg) standard t/r size = 1000 pieces on a 7 reel. not recommended for new designs recommended replacement parts: tqp7m9101
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 5 june 2011 ec1089 ? watt, high linearity ingap hbt amplifier typical device data s-parameters (vcc = +5 v, i cc = 160 ma, t = 25 c, unmatched 50 ohm system) 0 1000 2000 3000 frequency (mhz) gain / maximum stable gain 0 5 10 15 20 25 gain (db) db(|s(2,1)|) db(gmax()) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 3000mhz swp min 50mhz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 3000mhz swp min 50mhz notes: the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gai n is shown in the dashed red line. the impedance plots are shown from 50 C 3000 mhz, w ith markers placed at 0.5 C 3.0 ghz in 0.5 ghz incr ements. s-parameters (vcc = +5 v, i ds = 160 ma, t = 25 c, unmatched 50 ohm system, calibrated to device le ads) freq (mhz) s11 (db) s11 (ang) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -5.84 -157.07 20.78 151.09 -25.69 17.37 -8.29 -1 11.19 250 -3.36 -177.43 15.15 141.44 -23.57 6.90 -5.83 -1 68.30 500 -3.07 173.83 13.70 131.20 -23.27 4.16 -5.74 177 .63 750 -2.91 166.79 12.61 117.86 -22.95 2.86 -5.65 169 .68 1000 -2.76 159.81 11.62 104.53 -22.54 1.07 -5.50 16 1.89 1250 -2.63 153.18 10.65 92.06 -22.35 -1.30 -5.41 15 5.53 1500 -2.55 146.03 9.64 80.38 -21.73 -2.45 -5.40 148 .42 1750 -2.46 138.90 8.72 69.61 -21.47 -5.13 -5.32 141 .74 2000 -2.44 132.69 7.92 59.90 -21.06 -7.78 -5.22 135 .43 2250 -2.39 126.08 7.11 50.30 -20.91 -10.80 -5.19 12 8.63 2500 -2.33 119.55 6.30 41.62 -20.54 -17.68 -5.18 12 2.48 2750 -2.30 112.75 5.66 32.78 -19.62 -19.18 -5.19 11 5.64 3000 -2.27 105.55 5.02 23.64 -19.51 -24.29 -5.11 10 8.85 device s-parameters are available for download off of the website at: http://www.triquint.com application circuit pc board layout circuit board material: .014 getek, 4 layers (othe r layers added for rigidity), .062 total thickness , 1 oz copper microstrip line details: width = .026, spacing = .026
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 5 june 2011 ec1089 ? watt, high linearity ingap hbt amplifier 900 mhz application circuit (ec1089b-pcb900) typical rf performance frequency 900 mhz s21 C gain 15.5 db s11 C input return loss -15 db s22 C output return loss -10 db output ip3 (+11 dbm / tone, 1 mhz spacing) +40 dbm output p1db +24 dbm noise figure 5.1 db supply voltage +5 v supply current 160 ma measured parameters were taken at 25 c. cap id=c4 c=56 pf cap id=c5 c=56 pf cap id=c9 c=1 pf diode1 id=d1 cap id=c3 c=1000 pf cap id=c2 c=56 pf cap id=c1 c=100000 pf ind id=l1 l=33 nh res id=l2 r=0 ohm cap id=c7 c=5.6 pf res id=l3 r=0 ohm res id=r1 r=2.7k ohm subckt id=u1 net="ec1089" port p=1 z=50 ohm port p=2 z=50 ohm vcc = +5 v 5.6 v c7 should be placed at the silk screen marker 'f' on the w j evaluation board. all passive components are of size 0603 unless othe rwise noted. c9 should be placed between on the w j evaluation board. size 1206 size 0805 the capacitor should be placed 19 @ 0.9ghz from pin 3 the capacitor should be placed 13.7 @ 0.9ghz from pin 1 of the ec1089 silk screen markers '8' and '9' size 0603 the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the fin al circuit layout in a system using a dc regulator. of the ec1089. l2, l3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. oip3 vs. frequency 37 38 39 40 41 42 43 44 600 700 800 900 1000 1100 frequency (.9 ghz matching) oip3 (dbm) 25c -40c +85c average cdma acpr 40 45 50 55 60 65 70 75 80 85 10 12 14 16 18 average output power (dbm) acpr (dbc) note: (is95) acpr1 measured at 750khz, forward 9 channel 1900 mhz application circuit (ec1089b-pcb1900) typical rf performance frequency 1900 mhz s21 C gain 12.2 db s11 C input return loss -15 db s22 C output return loss -10 db output ip3 (+11 dbm / tone, 1 mhz spacing) +41 dbm output p1db +23.5 dbm noise figure 5.9 db supply voltage +5 v supply current 160 ma measured parameters were taken at 25 c. cap id=c4 c=56 pf cap id=c5 c=56 pf ind id=l1 l=18 nh res id=r1 r=2.7 kohm cap id=c7 c=2.4 pf cap id=c9 c=1.2 pf diode1 id=d1 cap id=c1 c=56 pf cap id=c2 c=1000 pf cap id=c3 c=1e5 pf res id=l2 r=0 kohm amp ec1089 res id=l3 r=0 kohm vcc = +5 v 5.6 v marker "a" on the wj evaluation board. c7 should be placed at the silk screen all passive components are of size 0603 unless othe rwise noted. 4.6 @ 1.9ghz from pin 1.of the ec1089 the capacitor should be placed 29 @ 1.9ghz from pin 3. the capacitor should be placed marker "6" on the wj evaluation board. c9 should be placed at the silk screen size 1206 size 0805 the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the fin al circuit layout in a system using a dc regulator. l2, l3 - the 0 ohm resistor - can be removed (with a thru line) in the final circuit layout. average cdma acpr 40 45 50 55 60 65 70 75 80 85 10 12 14 16 18 average output power (dbm) acpr (dbc) note: (is95) acpr1 measured at 750khz, forward 9 channel oip3 vs. temperature vs. frequency 35 37 39 41 43 45 1600 1700 1800 1900 2000 2100 frequency (mhz) dbm 25c -40c 85c
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 5 june 2011 ec1089 ? watt, high linearity ingap hbt amplifier 2140 mhz application circuit (ec1089b-pcb2140) typical rf performance frequency 2140 mhz s21 C gain 11.5 db s11 C input return loss -15 db s22 C output return loss -10 db output ip3 (+10 dbm / tone, 1 mhz spacing) +40 dbm output p1db +23.5 dbm noise figure 5.4 db supply voltage +5 v supply current 160 ma measured parameters were taken at 25 c. cap id=c4 c=56 pf cap id=c5 c=56 pf cap id=c9 c=.8 pf diode1 id=d1 cap id=c3 c=1000 pf cap id=c2 c=56 pf cap id=c1 c=100000 pf ind id=l1 l=18 nh res id=l3 r=0 ohm cap id=c6 c=1.5 pf cap id=l2 c=1.5 pf res id=r1 r=2.7k ohm subckt id=u1 net="ec1089" port p=1 z=50 ohm port p=2 z=50 ohm vcc = +5 v 5.6 v c6 should be placed at the silk screen marker 'f' on the wj evaluation board. all passive components are of size 0603 unless othe rwise noted. c9 should be placed at on the wj evaluation board. size 1206 size 0805 the capacitor should be placed 39 @ 2.14ghz from pin 3 the capacitor should be placed 32.6 @ 2.14ghz from pin 1 of the ec1089 silk screen marker '6' the diode d1 is used as over-voltage protection on the evaluation boards. it is not specifically required in the fin al circuit layout in a system using a dc regulator. of the ec1089. l3 - the 0 ohm resistor - can be removed (with a th ru line) in the final circuit layout. configuration. component r1 is shown in the silkscreen but is not used for this
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone +1-503-615-9000 ? fax: +1-503-615-8900 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 5 june 2011 ec1089 ? watt, high linearity ingap hbt amplifier EC1089B-G (green / lead-free sot-89 package) mechan ical information this package is lead-free/green/rohs-compliant. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. the pla ting material on the leads is nipdau. outline drawing land pattern product marking the component will be marked with an 1089g designator with a lot code marked below the part designator on the top surface of the package. the y represents the last digit of the year the part was manufactured, the xxx is an auto-generated number and z refers to a wafer number. tape and reel specifications for this part are located on the website in the application notes section. msl / esd rating esd rating: class 1a value: passes between 250 and 500v test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating: level 3 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the prope r performance of this device. vias should use a .35m m (#80 / .0135) diameter drill and have a final plat ed thru diameter of .25 mm (.010). 2. add as much copper as possible to inner and oute r layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fa sten the board to a heatsink. ensure that the ground / thermal via region contacts the heatsink. 4. do not put solder mask on the backside of the p c board in the region where the board contacts the heatsink . 5. rf trace width depends upon the pc board materi al and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). ang les are in degrees. 1089g
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